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| 2N3906 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Silicon General Purpose Transistor TO-92 COLLECTOR 3 FEATURES 2 BASE 1 EMITTER . Power Dissipation PCM: 625 mW (Ta=25 ) 1 2 3 . Collector Current ICM: -200 mA . Collector - Base Voltage V(BR)CBO: -40 V ELECTRICAL CHARACTERISTICS (TA = 25 Parameter Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Transition Frequency Operating and Storage Junction Temperature Range SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT TJ, TSTG unless otherwise specified) Min. -40 -40 -5 100 60 250 Typ. -55 ~ +150 Max. -0.1 -0.1 -0.1 400 0.3 -0.95 UNIT V V V A V V MHz TEST CONDITIONS IC = -1 mA, IB = 0 A IC = -100 A, IE = 0 A IE = -100 A, IC = 0 A VCB = -40 V, IE = 0 A VCE = -40 V, IB = 0 A VEB = -5 V, IC = 0 A VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -50 mA IC = -50 mA, IB = -5 mA IC = -50 mA, IB = -5 mA VCE = -20 V, IC = -10 mA f = 100 MHz - CLASSIFICATION OF hFE(1) Rank Rang O 100 ~ 200 Y 200 ~ 300 G 300 ~ 400 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2N3906 Elektronische Bauelemente PNP Silicon General Purpose Transistor TYPICAL CHARACTERISTICS 3V +9.1 V < 1 ns +0.5 V 10 k CS < 4 pF* 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 275 0 < 1 ns 3V 275 10 k CS < 4 pF* 10.6 V 10.9 V * Total shunt capacitance of test jig and connectors Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C +25C -55C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 DC Current Gain http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2N3906 Elektronische Bauelemente PNP Silicon General Purpose Transistor VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Collector Saturation Region TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 1.0 0.5 0 -0.5 +25C TO +125C -1.0 -1.5 -2.0 0 20 qVB FOR VBE(sat) 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 -55C TO +25C qVC FOR VCE(sat) +25C TO +125C -55C TO +25C VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 "ON" Voltages Temperature Coefficients http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3 |
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